Title:
Semiconductor device and its manufacturing method
Document Type and Number:
Japanese Patent JP6218923
Kind Code:
B2
Abstract:
A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).
Inventors:
Hirohiko Nishiki
Akira Sasakura
Okabe Tatsu
Akira Sasakura
Okabe Tatsu
Application Number:
JP2016507761A
Publication Date:
October 25, 2017
Filing Date:
March 10, 2015
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L29/786; H01L21/336
Domestic Patent References:
| JP201316612A | ||||
| JP2010161373A | ||||
| JP201351421A | ||||
| JP2001194659A |
Attorney, Agent or Firm:
Seiji Okuda
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Hidetaka Okabe
Yu Tanaka
Murase Nariyasu
Rinko Kita
Osamu Kita
Ryoji Yamashita
Akiko Miyake
Hidetaka Okabe
Yu Tanaka
Murase Nariyasu
Rinko Kita