Title:
半導体装置とその製造方法
Document Type and Number:
Japanese Patent JP7188971
Kind Code:
B2
Abstract:
To require a technique for forming a source region without using ion injection technology in a semiconductor device including a nitride semiconductor layer.SOLUTION: A manufacturing method of a semiconductor device includes: a step for preparing a nitride semiconductor layer in which a second conductive type body region is formed on a first conductive type drift region; a step for forming a JFET region groove having depth reaching the drift region through the body region and a source region groove having depth not penetrating the body region; and a step for achieving crystal growth of a first conductive type nitride semiconductor in the JFET region groove and the source region groove by using crystal growth technology, forming a JFET region in the JFET region groove and forming a source region in the source region groove.SELECTED DRAWING: Figure 1
Inventors:
Hirofumi Kida
Takashi Ushijima
Yoshitaka Nagasato
Soejima Shigemasa
Tomohiko Mori
Hideya Yamadera
Takashi Ushijima
Yoshitaka Nagasato
Soejima Shigemasa
Tomohiko Mori
Hideya Yamadera
Application Number:
JP2018193421A
Publication Date:
December 13, 2022
Filing Date:
October 12, 2018
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/78; H01L21/20; H01L21/336; H01L29/12
Domestic Patent References:
| JP2017212407A | ||||
| JP2014154887A |
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office