To provide a semiconductor device and its production process for restricting ferroelectric capacitor impairment caused by hydrogen, by improving coating property of a barrier metal layer on an upper electrode of the ferroelectric capacitor.
The semiconductor device includes a switching transistor ST formed on a semiconductor substrate 10; an interlayer insulating film 115 formed on the switching transistor; a ferroelectric capacitor FC made up of an upper electrode 50 formed on the interlayer insulating film, a ferrodielectric film 40 and a bottom electrode 30; a contact plug MP 1 formed on the in interlayer insulating film and connected to the bottom electrode; a diffusion layer DL for connecting the contact plug and the switching transistors; a barrier metal 60 for covering the whole upper face of the upper electrode; and an insulating sidewall film 100 formed on the side face of the barrier metal and on the same face as the side face of the upper electrode.
| JP2001274353A | 2001-10-05 | |||
| JP2006005152A | 2006-01-05 | |||
| JP2002353414A | 2002-12-06 | |||
| JP2001210798A | 2001-08-03 | |||
| JP2003258201A | 2003-09-12 |
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Akaoka Akira
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