Title:
SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP3927752
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To simplify a manufacturing process, without degrading the electrical characteristic of a thin-film field-effect transistor.
SOLUTION: In the semiconductor device, thin-film field-effect transistors 17, 18 which contain channel regions 5, 7 are provided. A transparent substrate 1, a single-layer substrate film 2 and the upper layers 5, 7 are provided. The film 2 is formed on the substrate 1. The upper layers 5, 7 are formed, so as to come into contact with the film 2, and they contain a polysilicon film which becomes the regions 5, 7 for the transistors 17, 18.
Inventors:
Takanabe Shoichi
Murai Ichiro
Murai Ichiro
Application Number:
JP2000080111A
Publication Date:
June 13, 2007
Filing Date:
March 22, 2000
Export Citation:
Assignee:
Mitsubishi Electric Corporation
Seiko Epson Corporation
Seiko Epson Corporation
International Classes:
G02F1/136; H01L29/786; G02F1/1368; H01L21/318; (IPC1-7): H01L29/786; G02F1/1368; H01L21/318
Domestic Patent References:
| JP10173196A | ||||
| JP64037535A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
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