Title:
SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL PANEL USING IT
Document Type and Number:
Japanese Patent JP3281756
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor device which can have a margin when etching during formation of a contact hole, and improve the contact between a takeout electrode and a gate electrode, and raise the yield rate.
CONSTITUTION: In a semiconductor device, where source and drain regions having high-concentration impurities are made in the semiconductor layer 2 provided on a substrate 1, and a gate electrode 4 is made through a gate insulating film 3 on the semiconductor layer 2, and a protective insulating film 8 is made on the source and drain regions and the gate electrode 4, and wirings are connected to the source and drain regions and the gate electrode through the contact hole 9 provided in this protective insulating film 8, an electrode layer 14 is provided below the gate electrode 4 lying under the contact hole 9.
Inventors:
Norihiro Terada
Masaaki Kameda
Yasuki Harada
Masaaki Kameda
Yasuki Harada
Application Number:
JP8794595A
Publication Date:
May 13, 2002
Filing Date:
April 13, 1995
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
G02F1/136; G02F1/1368; H01L21/28; H01L21/336; H01L29/43; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368; H01L21/336
Domestic Patent References:
| JP5326960A | ||||
| JP5828870A | ||||
| JP61252667A | ||||
| JP5114734A | ||||
| JP1192173A |
Attorney, Agent or Firm:
Hiroshi Torii
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