Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018201011
Kind Code:
A
Abstract:
To provide a semiconductor device that can realize a good electrical characteristic and high integration.SOLUTION: In a semiconductor device having oxide in a channel formation region, the semiconductor device comprises a transistor, an interlayer film and wiring, the transistor comprises oxide on a first insulator, a second insulator on the oxide, a first conductor of the second insulator, and a third insulator that contacts with a side surface of the second insulator and a side surface of the first conductor, the oxide comprises a first region overlapping the second insulator, a second region overlapping the third insulator, and a third region contacting with the second region, the third region has lower oxygen density than the first region and the second region, the second region has lower oxygen density than the first region, the interlayer film is disposed contacting with a side surface of the oxide, an upper surface of the oxide, and a side surface of the third insulator on the first insulator, the wiring contacts with the interlayer film and is electrically connected to the third region, and an upper surface of the third insulator almost coincides with an upper surface of the interlayer film.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2018032987A
Publication Date:
December 20, 2018
Filing Date:
February 27, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108