SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Japanese Patent JP3738816

B2

PROBLEM TO BE SOLVED: To make a nonvolatile memory transistor mixedly mountable on the same semiconductor substrate together with other elements, by forming the memory transistor, a capacitance element, and another capacitance element on one semiconductor substrate and making the thicknesses of dielectric films different from each other.
SOLUTION: A silicon oxide film 25 is formed on the surfaces of lower electrodes 19 and 21 and the side face of a floating gate 17. Then, after another silicon oxide film 37 is deposited on the film 25, openings are formed by exposing and developing an applied photoresist film. After the openings are formed, a silicon oxide film 41 and a silicon nitride film are deposited. Then silicon nitride films 43b are formed on the lower electrodes 19 and 21 by etching the silicon nitride film in the vertical direction, and a silicon oxide film is deposited on the whole surface. Thereafter, a polycrystalline silicon film is deposited on the silicon oxide film, and a polysilicon film is left by patterning. Thus, the thicknesses of the dielectric films of a capacitance element are made different from each other, so that the constituents of the dielectric films differ from each other.

Kuwasawa Kazunobu

JP2000102083A

January 25, 2006

April 04, 2000

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Seiko Epson Corporation

H01L21/8247; H01L21/02; H01L21/28; H01L21/336; H01L27/08; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L27/115; H01L21/8247; H01L29/788; H01L29/792

JP5021808A
JP9321227A
JP9092736A
JP10154792A
JP3105981A
JP4348568A

Inoue Ichi
Yukio Fuse
Mitsue Obuchi

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