Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH06104284
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device which has a high dielectric strength without any decline in the resistance between a gate and a source and wherein the gate length is shortened without increasing the gate resistance and to provide a method for manufacturing thereof.
CONSTITUTION: On a drain electrode-side side wall of a gate recess 2b, an n-layer 3 is formed which has a smaller impurity density than an n-type active layer 2. And, in the gate recess 2b, a gate electrode 7a whose gate length is shortened is formed so that its upper part may be extended toward the drain electrode.
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Inventors:
NAKAMOTO TAKAHIRO
Application Number:
JP27791292A
Publication Date:
April 15, 1994
Filing Date:
September 21, 1992
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/812; H01L21/338; (IPC1-7): H01L21/338; H01L29/812
Attorney, Agent or Firm:
Kenichi Hayase