PURPOSE: To obtain a semiconductor device of excellent reliability and stability by making a crystal defect reducing generation-recombination center contain in a semiconductor region of a conduction type different from a semiconductor substrate when the region is formed to the semiconductor substrate and the semiconductor device having a memory function is manufactured.
CONSTITUTION: A thick field insulating film 2 is formed to the peripheral section of a semiconductor substrate 1 while using a p+ type channel stopper region 3 as an underlay, and the surface of the substrate 1 surrounded by the film 2 is coated with a thin insulating film 4 for shaping capacitance and a gate. An n+ type source or drain region and a region 7 connected to a bit wire 10 are formed to the substrate 1 through ion implantation, etc. A capacitance electrode 5 and a gate electrode 6 are formed on both sides of the source-drain region 7 while holding the region 7, and coated with a PSG film 8. In the constitution, crystal defects of approximately 1×102 number/cm2 or more in an extent that leakage currents are not generated in a p-n junction are made contain in the source-drain region 7 through heat treatment.
| JPS60160646 | MANUFACTURE OF SOI TYPE SEMICONDUCTOR DEVICE |
| JPH01276616 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JPH0799286 | SEMICONDUCTOR DEVICE |
ITOU KATSUHIKO
AOSHIMA TAKAAKI
| JPS57107074A | 1982-07-03 | |||
| JPS5790973A | 1982-06-05 | |||
| JPS57194581A | 1982-11-30 | |||
| JPS5693367A | 1981-07-28 |