PURPOSE: To prevent a substrate from breaking down while enabling any heat generated in operation to be dissipated efficiently by a method wherein the back surface of substrate of individual semiconductor device is bonded onto a metal plate with rigidity and heat dissipation property.

CONSTITUTION: After finishing the manufacture of multiple semiconductor devices, the back surface of substrate 31 is ground in the specified thickness. Then, the ground surface is pressurized and heated to be bonded onto a copper plate 35 with excellent rigidity and heat dissipation property using an exclusive jig and a thermosetting adhesives 33. Next, after finishing the cleaning process, a backmetal 39 is formed to divide the multiple semiconductor devices into individual device 41. Through these procedures, the breakdown of substrate 31 after grinding process can be prevented from occurring while enabling any heat generated in operation to be dissipated efficiently.