Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2014204038
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To obtain a semiconductor device and a manufacturing method of the same, which can reduce an occupied area of a termination structure while maintaining a stable withstanding voltage.SOLUTION: A semiconductor device comprises: an active region in which a p type well 4 is provided on an ntype layer 3; and a flat p-type resurf layer 13 provided on an outer periphery of the p-type well 4 and on the ntype layer 3 as a termination structure. The p-type resurf layer 13 includes a low-concentration layer 13a arranged on an inner end on the p-type well 4 side and an outer end on the outer periphery side, and a high-concentration layer 13b which is arranged between the inner end and the outer end and has an impurity concentration higher than that of the low-concentration layer 13a.
Inventors:
TAKAHASHI TETSUO
Application Number:
JP2013080695A
Publication Date:
October 27, 2014
Filing Date:
April 08, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/06; H01L29/41; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JPH02114646A | 1990-04-26 | |||
| JPS6184830A | 1986-04-30 | |||
| JP2002231965A | 2002-08-16 | |||
| JP2010245281A | 2010-10-28 | |||
| JPH07273325A | 1995-10-20 | |||
| JP2008147362A | 2008-06-26 | |||
| JP2003101039A | 2003-04-04 |
Attorney, Agent or Firm:
Takada 守
Hideki Takahashi
Kuno 淑己
Hideki Takahashi
Kuno 淑己