Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2015109426
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high on-state current and low off-state current; or provide a semiconductor device having stable electrical characteristics.SOLUTION: Provided is a semiconductor device which uses a gate electrode having the Gibbs free energy of oxidation reaction higher than that of a gate insulation film. A semiconductor device manufacturing method comprises the steps of: forming an oxide semiconductor and a second electrode on a first electrode; forming a gate insulation film so as to contact the first electrode, the oxide semiconductor and the second electrode; forming a gate electrode which faces a lateral face of the oxide semiconductor across the gate insulation film and at least includes an oxide layer; and subsequently performing a heat treatment to supply oxygen from the gate electrode to the oxide semiconductor via the gate insulation film.
Inventors:
TANAKA TETSUHIRO
GOTO HIROMITSU
GOTO HIROMITSU
Application Number:
JP2014213707A
Publication Date:
June 11, 2015
Filing Date:
October 20, 2014
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/8234; H01L21/8242; H01L27/088; H01L27/105; H01L27/108; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792