Title:
半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置
Document Type and Number:
Japanese Patent JP7387685
Kind Code:
B2
Abstract:
There is provided a technique that includes: (a) supplying a metal element-containing gas to a substrate accommodated in a process vessel; (b) supplying a reducing gas to the substrate; (c) performing (a) and (b) a predetermined number of times to form a film containing a metal element on the substrate; (d) supplying a modifying gas to the film to form a layer including an element contained in the modifying gas on a surface of the film after (c); and (e) creating a rare gas atmosphere in the process vessel and in a transfer chamber adjacent to the process vessel and carrying the substrate out of the process vessel and into the transfer chamber after (d).
Inventors:
Yukinaga Kuribayashi
Ogawa Manned
Kenkazu Mizuno
Ogawa Manned
Kenkazu Mizuno
Application Number:
JP2021151868A
Publication Date:
November 28, 2023
Filing Date:
September 17, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC Inc.
International Classes:
C23C16/52; C23C16/08; C23C16/56; H01L21/285; H01L29/423; H01L29/49
Domestic Patent References:
| JP2019102780A | ||||
| JP2015056633A |
Foreign References:
| WO2020045299A1 | ||||
| WO2016046909A1 | ||||
| WO2018179354A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Taiyo International Patent Office
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