To provide a semiconductor device that reduces the interval of bit lines and increases storage capacity density easily, and to provide a manufacturing method of the semiconductor device.

The semiconductor device includes: a first bit line 14 provided on a substrate 10; an insulating layer 12 that is provided between the first bit lines 14 on the substrate 10 and has an upper surface higher than that of the first bit line 14; a channel layer 16 that is provided on both side faces of the insulating layer 12 and is connected to each first bit line 14; and a charge storage layer 22 provided on a side face that opposes a side face where the insulating layer 12 of the channel layer 16 is provided. The manufacturing method for the semiconductor device is also presented.