PURPOSE: To cut down the wiring length while making a chip smaller and the rapid operation feasible by a method wherein a plurality of devices indpendently performing electric operations on semiconductor rods provided on a substrate are formed.
CONSTITUTION: Within semiconductor rods 5, the first N layer, P layer, the second N layer, i layer, the third layer, the second P layer, the fourth layer are formed from a GaAs substrate (111) side. Next, a plurality of electrodes 3 are provided on the substrate 1 to provide insulating layers 2 between the electrodes 3. Besides, the electrodes 3 connect the semiconductor rods 5 while the electrodes 3 connected to the i layer is grounded. Furthermore, NPN transistors are respectively and electrically devided to be formed on the upper and lower parts of the semiconductor rods 5 while a protective film 4 is provided on the electrode 3 connected to the fourth N layer. Through these procedures, the wiring length can be cut down making a chip smaller and the rapid operation feasible.
HIRUMA TAKEYUKI
KATSUYAMA TOSHIO
SHIMADA JUICHI
| JPH0697425A | 1994-04-08 |
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