To provide a semiconductor device using a through electrode with high reliability and a manufacturing method.

A semiconductor device includes a semiconductor substrate 1 having a through hole, an electrode pad 3 for covering the through hole on a first face of the semiconductor substrate 1, an external connection terminal 7 arranged on a second face of the semiconductor substrate 1, a conductive wire 6 passing the through hole for connecting the electrode pad 3 and the external connection terminal 7 in continuity, a first insulating film 2 arranged on the first face of the semiconductor substrate 1, and a second insulating film 5 arranged on the second face of the semiconductor substrate 1 and on the surface of the inside of the through hole in order to insulate the conductive wire 6 and the semiconductor substrate 1. The conductive wire 6 is connected to the electrode pad 3 through a connection opening formed on at least one of the first insulating film 2 and the second insulating film 5 arranged in a way that they are at least partly overlapped on a bottom face of the through hole, and the connection opening is so formed that it is not over the peripheral part of the bottom face of the through hole.

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