Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013161878
Kind Code:
A
Abstract:

To provide a semiconductor device including two transistors which can be easily manufactured ane which have characteristics different from each other.

A semiconductor device comprises: a substrate; a multilayer wiring layer provided on the substrate; a transistor 14 provided in the multilayer wiring layer; and a transistor 15 which is provided in a layer different from a layer where the transistor 14 is provided and which has characteristics different from those of the transistor 14. Accordingly, a semiconductor device including two transistors which can be easily manufactured and which have characteristics different from each other can be provided.


Inventors:
SUNAMURA JUN
INOUE HISAYA
KANEKO TAKAAKI
Application Number:
JP2012021073A
Publication Date:
August 19, 2013
Filing Date:
February 02, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L29/786; H01L21/336; H01L21/768; H01L21/8238; H01L21/8242; H01L21/8244; H01L21/8247; H01L27/00; H01L27/092; H01L27/10; H01L27/105; H01L27/108; H01L27/11; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2007318106A2007-12-06
JP2007525004A2007-08-30
JP2010141230A2010-06-24
JPH11251518A1999-09-17
JP2007251100A2007-09-27
JP2006287238A2006-10-19
JP2009004519A2009-01-08
JP2009260364A2009-11-05
JP2009212380A2009-09-17
JP2009099200A2009-05-07
JP2006512776A2006-04-13
Foreign References:
US20070254455A12007-11-01
US20070127297A12007-06-07
US20040262635A12004-12-30
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi