Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013161878
Kind Code:
A
Abstract:
To provide a semiconductor device including two transistors which can be easily manufactured ane which have characteristics different from each other.
A semiconductor device comprises: a substrate; a multilayer wiring layer provided on the substrate; a transistor 14 provided in the multilayer wiring layer; and a transistor 15 which is provided in a layer different from a layer where the transistor 14 is provided and which has characteristics different from those of the transistor 14. Accordingly, a semiconductor device including two transistors which can be easily manufactured and which have characteristics different from each other can be provided.
Inventors:
SUNAMURA JUN
INOUE HISAYA
KANEKO TAKAAKI
INOUE HISAYA
KANEKO TAKAAKI
Application Number:
JP2012021073A
Publication Date:
August 19, 2013
Filing Date:
February 02, 2012
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L29/786; H01L21/336; H01L21/768; H01L21/8238; H01L21/8242; H01L21/8244; H01L21/8247; H01L27/00; H01L27/092; H01L27/10; H01L27/105; H01L27/108; H01L27/11; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP2007318106A | 2007-12-06 | |||
JP2007525004A | 2007-08-30 | |||
JP2010141230A | 2010-06-24 | |||
JPH11251518A | 1999-09-17 | |||
JP2007251100A | 2007-09-27 | |||
JP2006287238A | 2006-10-19 | |||
JP2009004519A | 2009-01-08 | |||
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JP2006512776A | 2006-04-13 |
Foreign References:
US20070254455A1 | 2007-11-01 | |||
US20070127297A1 | 2007-06-07 | |||
US20040262635A1 | 2004-12-30 |
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi
Satoshi Amagi