Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2014067790
Kind Code:
A
Abstract:
To control a heat treatment performed on a semiconductor substrate with high accuracy.
In a semiconductor device manufacturing method: a semiconductor substrate SUB is heat treated by heat from a lamp HT; power input to the lamp HT is controlled by a control part CM; the control part CM controls an input of power to the lamp HT such that a timing of the temperature peak of the semiconductor substrate SUB comes after the peak of the power input to the lamp HT; and a temporal change of a magnitude of the power input to the lamp HT is controlled based on electric energy input to the lamp HT.
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Inventors:
HIGUCHI NAOSHI
Application Number:
JP2012210698A
Publication Date:
April 17, 2014
Filing Date:
September 25, 2012
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/26; H01L21/265
Attorney, Agent or Firm:
Shinji Hayami
Satoshi Amagi
Satoshi Amagi