SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Japanese Patent JP2015207642

A

PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device.SOLUTION: A semiconductor device comprises: a MOSFET having a gate electrode GE formed on a semiconductor layer via a gate insulation layer GI and source and drain regions (s, d) formed in the semiconductor layer on both sides of the gate electrode GE; and a diode. The diode has an ntype semiconductor region NP, a p type semiconductor region PR and a ptype semiconductor region PP. The gate electrode GE is connected to the ntype semiconductor region NP via an n type semiconductor region NR which is formed to be connected to the ntype semiconductor region NP. In addition, the ptype semiconductor region PP is connected to a semiconductor layer below the gate electrode GE. As described above, by providing the diode between a back gate BG and the gate electrode GE of the MOSFET, breakdown of the gate insulation film GI can be prevented.

TSUBAKI SHIGEKI

JP2014086893A

November 19, 2015

April 18, 2014

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RENESAS ELECTRONICS CORP

H01L27/06; H01L21/329; H01L21/336; H01L21/822; H01L27/04; H01L27/08; H01L29/66; H01L29/78; H01L29/786; H01L29/861; H01L29/866; H01L29/868

JP2007165355A	2007-06-28
JP2000323582A	2000-11-24
JP2005340627A	2005-12-08
JP2001284579A	2001-10-12
JPH04241452A	1992-08-28
JP2006024601A	2006-01-26
JP2007165355A	2007-06-28
JP2000323582A	2000-11-24
JP2005340627A	2005-12-08
JP2001284579A	2001-10-12
JPH04241452A	1992-08-28
JP2006024601A	2006-01-26

Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji

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