MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Japanese Patent JP2023059543

A

To provide a manufacturing method for a semiconductor device which is capable of performing grinding without a peripheral part of an object to be processed coming off of a double-sided adhesive sheet and by which the object to be processed is unlikely to cause warp or breakage.SOLUTION: A manufacturing method of a semiconductor device has: a rear face grinding step of, by using a double-sided adhesive sheet 1c which is provided with a first adhesive layer (X1) as an outer layer on one surface side and a second adhesive layer (X2) as an outer layer on the other surface side, in which the second adhesive layer has energy ray curing properties, grinding a surface of a wafer W on the opposite side of a surface adhered to the second adhesive layer in the state that a support body 3 having energy ray permeability is adhered to the first adhesive layer and the wafer W is adhered to the second adhesive layer; and an energy ray irradiation step of selectively starting irradiation, with an energy ray, of an area X2g of the second adhesive layer corresponding to a part Wq inside a peripheral part Wp of the wafer W via the support body and the first adhesive layer, thereby curing the area X2q of the second adhesive layer.SELECTED DRAWING: Figure 4

NEMOTO TAKU
NAKANISHI KOKI
SHINODA TOMONORI
TAMURA SAKURAKO

JP2021169613A

April 27, 2023

October 15, 2021

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LINTEC CORP

H01L21/301; C09J7/38; C09J201/00

JP2016119370A	2016-06-30
JP2002334857A	2002-11-22
JP2013203800A	2013-10-07
JP2007045965A	2007-02-22
JP2007070521A	2007-03-22
JP2003064329A	2003-03-05
JP2015233150A	2015-12-24
JP2014030029A	2014-02-13

WO2021200789A1

2021-10-07

Patent Attorney Corporation Otani Patent Office

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