Title:
半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP4103071
Kind Code:
B2
Inventors:
Yoshihiro Ito
Michio Kadota
Saijo Shin
Michio Kadota
Saijo Shin
Application Number:
JP2002172302A
Publication Date:
June 18, 2008
Filing Date:
June 13, 2002
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H01L29/22; H01L21/36; H01L21/363
Domestic Patent References:
| JP2004022625A |
Other References:
Satoshi KAZUTA et.al.,Determination of the Polarities of ZnO Thin Films on Polar and Nonpolar Substrates Using Scanning No,Japanese Jorunal of Applied Physics,日本,2000年 5月,Vol.39,No.5B,p.3121-3124
Shen Zhu et.al.,Polarity effects of substrate surface in homoepitaxial ZnO film growth,Journal of Crystal Growth,2000年11月,Vol.219,No.4,p.361-367
Shen Zhu et.al.,Polarity effects of substrate surface in homoepitaxial ZnO film growth,Journal of Crystal Growth,2000年11月,Vol.219,No.4,p.361-367
Attorney, Agent or Firm:
Kunihiro Yasutoshi
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