Title:
半導体装置の製造方法、基板処理装置およびプログラム
Document Type and Number:
Japanese Patent JP6523186
Kind Code:
B2
Abstract:
A semiconductor device manufacturing method includes forming a film having a desired composition on a substrate by selectively performing at least one of: performing, n1 times, a cycle including processes of sequentially supplying a first precursor gas, a nitriding gas and an oxidizing gas to the substrate; performing, n2 times, a cycle including processes of sequentially supplying the first precursor gas, the oxidizing gas and the nitriding gas to the substrate; performing, n3 times, a cycle including processes of sequentially supplying a second precursor gas containing a chemical bond of a predetermined element and carbon, which is more than that contained in the first precursor gas, the nitriding gas and the oxidizing gas to the substrate; and performing, n4 times, a cycle including processes of sequentially supplying the second precursor gas, the oxidizing gas and the nitriding gas to the substrate.
Inventors:
Yoshitomo Hashimoto
Application Number:
JP2016017113A
Publication Date:
May 29, 2019
Filing Date:
February 01, 2016
Export Citation:
Assignee:
Kokusai electric inc.
International Classes:
H01L21/318; C23C16/42; H01L21/31; H01L21/768; H01L23/532
Domestic Patent References:
| JP2015035477A | ||||
| JP2015053445A | ||||
| JP2013077805A | ||||
| JP2014175509A | ||||
| JP2015170614A | ||||
| JP2013135176A | ||||
| JP2014063859A |
Attorney, Agent or Firm:
Fukuoka Masahiro
Aniya Setsuo
Aniya Setsuo