Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING THEREOF
Document Type and Number:
Japanese Patent JPS55117233
Kind Code:
A
Abstract:
PURPOSE:To eliminate strain or dislocation and obtain a semiconductor device of good electric properties, by using Ge and an impurity having covalent bonding smaller than the covalent bonding radius of Si to produce a diffused layer on an Si substrate. CONSTITUTION:A diffused layer 12 is produced in a surface part of an Si substrate 11. A protective film 14 is coated on a doped layer 13 on the diffused layer 12 to prevent an impurity from being diffused out. A semiconductor device 10 is thus manufactured. A mixture of Ge and an impurity such as P or B having a smaller convalent bonding radius than Si is used for the diffused layer 12 depending on an electroconductive type to be obtained. The ratio of the diffused quantity of the impurity to that of the Ge in the diffused layer 12 is prescribed at 1.30 or less. The atom bonding radius is made uniform by the impurity of smaller covalent bonding radius and the Ge of larger covalent bonding radius. This results in making the semiconductor device undefective.
Inventors:
OGINO MASANOBU
WATANABE MASAHARU
OANA YASUHISA
TAKAI NORIHEI
WATANABE MASAHARU
OANA YASUHISA
TAKAI NORIHEI
Application Number:
JP2371179A
Publication Date:
September 09, 1980
Filing Date:
March 01, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
TOSHIBA CERAMICS CO
TOSHIBA CERAMICS CO
International Classes:
H01L29/73; H01L21/22; H01L21/225; H01L21/331; H01L29/167; (IPC1-7): H01L29/12