SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

Japanese Patent JP2023091135

A

To provide a semiconductor device in which on-resistance can be reduced.SOLUTION: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer provided between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a direction connecting a first end of an interface between the first electrode and the first insulating layer and a second end of an interface between the second electrode and the second insulating layer is defined as a second direction. In the cross section, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode in the second direction, and in the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode in the second direction.SELECTED DRAWING: Figure 1

KAWASE AKIFUMI
HOANG HA
SAKATA ATSUKO
KAMIYA YUTA
MATSUO KAZUNORI
SAWA KEIICHI
TAKAHASHI KOTA
TORAYA KENICHIRO
LIU YIMIN

JP2021205699A

June 30, 2023

December 20, 2021

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KIOXIA CORP

H01L29/786; H01L21/336; H01L21/8234; H01L27/088; H10B12/00

Tetsuma Ikegami
Akira Sudo
Masahiro Koshita

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