Title:
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3897826
Kind Code:
B2
Abstract:
PURPOSE: To eliminate variations of characteristics and deterioration by increasing breakdown voltage by bringing atoms of carbon, nitrogen, and oxygen in a region that is substantially regarded as a single crystal in a thin film silicon semiconductor to specific concentration and further bringing hydrogen atom neutralizing non-paired bonds of silicon to specific concentration.
CONSTITUTION: There are formed an oxidized silicon film 102 as a base film and then an amorphous silicon film 103 on a quartz substrate 101. Crystal growth is achieved by irradiating it with laser light to obtain a crystal region 106 regarded as a single crystal. There are contained in the crystal region 106 atoms of carbon and nitrogen of 1×1016 to 5×1018cm-3 and oxygen atom of 1×1017 to 5×1019cm-3. Further, since lattice defects exist in principle, hydrogen atom is contained at the concentration of 1×1017 to 5×1020 in order to neutralize non-paired bonds of silicon. Further, an active layer of a thin film transistor is formed with patterning using the region 106 regarded as a single crystal. Hereby, there can be solved problems such as low breakdown voltage due to crystal grain boundary and a large leakage current.
Inventors:
Shunpei Yamazaki
Satoshi Teramoto
Satoshi Teramoto
Application Number:
JP21807794A
Publication Date:
March 28, 2007
Filing Date:
August 19, 1994
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/20; H01L21/265; H01L21/268; H01L21/336; H01L21/77; H01L27/12; H01L29/04; (IPC1-7): H01L29/786; H01L21/20; H01L21/265; H01L21/268; H01L21/336
Domestic Patent References:
| JP2140915A | ||||
| JP6037112A | ||||
| JP6029320A | ||||
| JP6123896A |
Other References:
GANG LIU,S.J.FONASH,Selective area crystalliation of amorphous silicon films by low-temperature rapid thermal annealing,Applied Physics Letters,米国,American Institute of Physics,1989年 8月14日,55(7),660-662