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Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING INSULATION FILM
Document Type and Number:
Japanese Patent JP2002026121
Kind Code:
A
Abstract:

To increase the resistance with respect to various chemicals and plasma used in semiconductor manufacturing processes by improving the adhesiveness of a low-density film having low permittivity.

The surface of the low-density film, having a low permittivity, is plasma-treated to form a very fine surface modified layer.


Inventors:
MAEKAWA KAORU
NAGAI HIROYUKI
INASAWA KOICHIRO
SUEMASA TOMOKI
Application Number:
JP2000199737A
Publication Date:
January 25, 2002
Filing Date:
June 30, 2000
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/768; H01L21/316; H01L23/522; (IPC1-7): H01L21/768; H01L21/316
Domestic Patent References:
JPH1187503A1999-03-30
JP2000058642A2000-02-25
JPH10189715A1998-07-21
JPH1070121A1998-03-10
JP2000091422A2000-03-31
JPH11297829A1999-10-29
Attorney, Agent or Firm:
Tadahiko Ito



 
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