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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPLIANCE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2003197603
Kind Code:
A
Abstract:

To provide a method for manufacturing a semiconductor device which enables the formation of a through hole at a low cost, preventing environmental destruction, and ensures the formation of a conductive layer in the through hole, and thus enhances the reliability of product, and to provide a semiconductor device using the same, and to provide an electronic appliance and a method for manufacturing the same.

The semiconductor device is provided with a substrate having the through holes in grid-like layouts, in which the conductive layers are formed. The method for manufacturing the semiconductor device comprises a process for forming the through holes in grid-like layouts in the substrate, and a process for forming the conductive layers in the through holes in grid-like layouts. Further provided are the electronic appliance mounted with the semiconductor device which has been manufactured by the method for manufacturing the semiconductor device, and the method for manufacturing the electronic appliance.


Inventors:
KARASAWA YASUSHI
Application Number:
JP2001393173A
Publication Date:
July 11, 2003
Filing Date:
December 26, 2001
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/3063; (IPC1-7): H01L21/3063
Attorney, Agent or Firm:
Muneharu Sasaki (3 outside)