To provide a semiconductor device easily improving the degree of integration of a nonvolatile memory cell even without thoroughly relying on miniaturization by a lithography technology.
This semiconductor device includes: a first insulation region formed on a semiconductor substrate; a first active region formed on the first insulation region; a first nonvolatile memory cell formed on the first active region; a second insulation region formed adjacently to the first insulation region on the semiconductor substrate and having a height smaller than that of the first insulation region in the channel width direction of the first nonvolatile memory cell; a second active region formed on the second insulation region and having an upper surface having a height smaller than that of the first insulation region in the channel width direction; and a second nonvolatile memory cell formed on the second active region and having a channel width direction identical to that of the first nonvolatile memory cell.
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Tetsuya Kazama
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen