SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Document Type and Number:

Japanese Patent JP2010153464

Kind Code:

A

Abstract:

To provide a technology capable of preventing the propagation of basal plane dislocation from a semiconductor layer having the basal plane dislocation to a crystally grown semiconductor layer without performing etching treatment.

A method includes: a specifying step of specifying the position 8 of the basal plane dislocation 6 on the surface 2a of the semiconductor layer 2; a crystal re-array step of re-arraying crystals at the position 8 specified in the specifying step; and a crystal growth step of crystally growing the semiconductor layer from the surface 2a after the crystal re-array step. By the method, the basal plane dislocation 6 is not propagated to the crystally grown semiconductor layer. Since the basal plane dislocation 6 is not propagated to the crystally grown semiconductor layer, a leakage current is suppressed.

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Inventors:

KATSUNO TAKASHI
WATANABE YUKIHIKO
YAMAMOTO TAKEO
ENDO TAKESHI
FUJIWARA HIROKAZU
KONISHI MASAKI

Application Number:

JP2008327627A

Publication Date:

July 08, 2010

Filing Date:

December 24, 2008

Export Citation:

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Assignee:

TOYOTA CENTRAL RES & DEV
DENSO CORP
TOYOTA MOTOR CORP

International Classes:

H01L21/20; H01L21/268; H01L21/329; H01L21/66; H01L29/47; H01L29/78; H01L29/872

Attorney, Agent or Firm:

Kaiyu International Patent Office

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