Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2019175908
Kind Code:
A
Abstract:
To provide a semiconductor device with a high breakdown voltage.SOLUTION: A semiconductor device comprises: an n-type first drift layer; an i- or n-type breakdown voltage layer arranged on the first drift layer; a p-type body layer arranged on the breakdown voltage layer; an n-type second drift layer arranged on the first drift layer and in contact with a side surface of the breakdown voltage layer and a side surface of the body layer; an n-type source layer arranged on the body layer and separated from the first drift layer, the second drift layer, and the breakdown voltage layer by the body layer; and a gate electrode facing the body layer positioned between the second drift layer and the source layer via a gate insulation film. The breakdown voltage layer is composed of a material having a larger bandgap than the first drift layer.SELECTED DRAWING: Figure 1
Inventors:
WATABE ATSUSHI
UEDA HIROYUKI
MORI TOMOHIKO
UEDA HIROYUKI
MORI TOMOHIKO
Application Number:
JP2018059700A
Publication Date:
October 10, 2019
Filing Date:
March 27, 2018
Export Citation:
Assignee:
TOYOTA MOTOR CORP
TOYOTA CENTRAL RES & DEV
TOYOTA CENTRAL RES & DEV
International Classes:
H01L29/78; H01L21/336; H01L29/12
Attorney, Agent or Firm:
Kaiyu International Patent Office