Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3961310
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a TFT (semiconductor device) having satisfactory characteristics by using a satisfactory crystalline semiconductor film which is formed by adding a catalytic element to an amorphous semiconductor film and heat-treating the film.
SOLUTION: The semiconductor layer has regions 1203, 1204 that contain impurity elements belonging to a group 15 in a periodic table with a concentration of 1×1019-1×1021/cm3, and impurity elements belonging to a group 13 in a periodic table with a concentration of 1.5×1019-3×1021/cm3. To these regions, catalytic-element atoms remaining in the semiconductor film (in particular, channel-forming region) are transferred.
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Inventors:
Misako Nakazawa
Naoki Makita
Naoki Makita
Application Number:
JP2002045239A
Publication Date:
August 22, 2007
Filing Date:
February 21, 2002
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
Sharp Corporation
Sharp Corporation
International Classes:
G02F1/1368; H01L29/786; H01L21/20; H01L21/322; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/423; H01L29/49; (IPC1-7): H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Domestic Patent References:
| JP11054760A | ||||
| JP2002025905A | ||||
| JP2002222960A | ||||
| JP2003017500A |