Semiconductor device and method of manufacturing the same

Japanese Patent JP6055799

B2

Both a HEMT and a SBD are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a HEMT gate structure region and an anode electrode region. A first laminated structure is formed at least in the HEMT gate structure region, and includes first to third nitride semiconductor layers. A second laminated structure is formed at least in a part of the anode electrode region, and includes first and second nitride semiconductor layers. The anode electrode contacts the front surface of the second nitride semiconductor layer. At least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.

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Shoichi Kaneko
Hiroyuki Ueda
Tomita Eiki

JP2014153463A

December 27, 2016

July 29, 2014

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Toyota Central R & D Labs.
TOYOTA JIDOSHA KABUSHIKI KAISHA

H01L21/8232; H01L21/28; H01L21/329; H01L21/337; H01L21/338; H01L27/06; H01L27/095; H01L27/098; H01L29/47; H01L29/778; H01L29/808; H01L29/812; H01L29/861; H01L29/868; H01L29/872

JP2013201242A
JP2000164926A
JP2014027187A
JP2011082445A

WO2013011617A1

Kaiyu International Patent Office

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