Title:
SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2023025393
Kind Code:
A
Abstract:
To provide a semiconductor element and a method for manufacturing the semiconductor element having excellent electrical characteristics and using diamond.SOLUTION: A method for manufacturing a semiconductor element comprises: a first hydroshikiation process (ST1) for introducing an OH group to at least a portion of a surface of a first semiconductor base material including a gallium oxide in composition; a second hydroshikiation process (ST2) for introducing OH groups to at least a portion of the surface of a second semiconductor base material containing diamond in composition; a contacting process (ST3) for contacting the surface of the first semiconductor base material with the OH group and the surface of the second semiconductor base material with the OH group; and a dehydration process (ST4) for performing a dehydration reaction by applying the activation energy to the first semiconductor base material and the second semiconductor base material that are brought into contact.SELECTED DRAWING: Figure 2
Inventors:
OMAGARI SHINYA
MATSUMAE TAKASHI
UMEZAWA HITOSHI
MATSUMAE TAKASHI
UMEZAWA HITOSHI
Application Number:
JP2021130604A
Publication Date:
February 22, 2023
Filing Date:
August 10, 2021
Export Citation:
Assignee:
AIST
International Classes:
H01L29/861; H01L21/02; H01L21/329
Attorney, Agent or Firm:
Hiroyuki Takamatsu