To improve the off characteristics of a semiconductor device for rectification in a structure, where a p+-type layer is provided at the bottom of a trench, an n-type layer is highly concentrated at a projection, and contact with an electrode material is allowed to be ohmic contact.

In the semiconductor device for rectification, a first lightly doped conductive semiconductor layer is composed on a first heavily doped conductive semiconductor, a plurality of trenches are formed from the surface of the first lightly doped conductive semiconductor layer, and a second-conductive semiconductor layer is formed at the bottom of the trench of the first lightly doped conductive semiconductor layer. In the semiconductor device for rectification, the first heavily doped conductive semiconductor layer is provided within the surface of the first lightly doped conductive semiconductor layer at the projection of the trench.