Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023141530
Kind Code:
A
Abstract:
To provide a semiconductor device with a configuration suitable for miniaturization and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises a transistor including a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film and containing germanium at least in its upper portion, a source region formed on the semiconductor substrate, and a drain region formed on the semiconductor substrate.SELECTED DRAWING: Figure 1
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Inventors:
FUNASAKO TOMOYUKI
MIYATA TOSHITAKA
MIYATA TOSHITAKA
Application Number:
JP2022047895A
Publication Date:
October 05, 2023
Filing Date:
March 24, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/336; H01L21/8238
Attorney, Agent or Firm:
Toru Kamada
Yoshiyuki Inaba
Kenro Murai
Yoshiyuki Inaba
Kenro Murai