Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001274265
Kind Code:
A
Abstract:
To suppress leakage current at standby.
A body bias generating circuit 13 supplies a body potentially Vbody-n to the body region of a PMOS transistor MP. The body potential Vbody-n is applied to a source region so that the body region becomes reverse biased or zero biased according to an input signal VBODYIN. The input signal VBODYIN is inputted, so that zero bias is applied to the body region stand-by by the PMOS transistor MP and reverse bias during operation. A body bias generating circuit 14 supplies a body potential Vbody-p to the body area of an NMOS transistor MN according to an inversion signal V*BODYIN of the input signal VBODYIN.
Inventors:
KUNIKIYO TATSUYA
Application Number:
JP2000088772A
Publication Date:
October 05, 2001
Filing Date:
March 28, 2000
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/8247; G11C5/14; G11C11/408; G11C11/412; H01L21/336; H01L21/76; H01L21/762; H01L21/822; H01L21/8238; H01L21/8242; H01L21/8244; H01L27/04; H01L27/08; H01L27/092; H01L27/10; H01L27/108; H01L27/11; H01L27/115; H01L27/12; H01L29/78; H01L29/786; H01L29/788; H01L29/792; H02M3/07; H03K19/094; (IPC1-7): H01L21/8238; H01L27/092; H01L21/76; H01L21/762; H01L27/04; H01L21/822; H01L27/08; H01L21/8244; H01L27/11; H01L21/8247; H01L27/115; H01L27/10; H01L27/108; H01L21/8242; H01L27/12; H01L29/78; H01L29/788; H01L29/792; H01L29/786; H01L21/336; H02M3/07; H03K19/094
Domestic Patent References:
| JPH09321259A | 1997-12-12 | |||
| JPH10229166A | 1998-08-25 | |||
| JPH0817183A | 1996-01-19 | |||
| JPH0936246A | 1997-02-07 | |||
| JPH10189884A | 1998-07-21 | |||
| JPH05108194A | 1993-04-30 | |||
| JPH10190444A | 1998-07-21 | |||
| JPH0689574A | 1994-03-29 |
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)
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