Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002043323
Kind Code:
A
Abstract:
To stably and sufficiently improve a dielectric strength between a base and a collector of a transistor.
This transistor has a base region 3, an emitter region 4, 1st and 2nd collector regions 5 and 6a, and a dielectric strength improving semiconductor region 2. The 2nd collector region 6a is made to face the inner circumference part of the dielectric strength improving semiconductor region 2 with the 1st collector region 5 between them but not to face the outer circumference of the dielectric strength improving semiconductor region 2.
Inventors:
KONO YOSHINOBU
Application Number:
JP2000225630A
Publication Date:
February 08, 2002
Filing Date:
July 26, 2000
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L29/73; H01L21/331; H01L29/861; (IPC1-7): H01L21/331; H01L29/73; H01L29/861
Attorney, Agent or Firm:
Takano Noritsuji