Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002319587
Kind Code:
A
Abstract:
To obtain a pad structure for protecting an active element provided beneath the pad part of a semiconductor device against an external stress.
A second lattice pattern interconnect 11 is formed beneath a pad part 17 and irregularities are provided on the surface at the pad part. A stress occurring in the fabrication process or at the time of bonding is dispersed by the irregularities on the surface at the pad part 17 and the stress being applied to an active element is relaxed.
Inventors:
OMURO SHINGO
Application Number:
JP2001124853A
Publication Date:
October 31, 2002
Filing Date:
April 23, 2001
Export Citation:
Assignee:
SEIKO INSTR INC
International Classes:
H01L23/52; H01L21/3205; H01L21/60; H01L21/82; H01L21/822; H01L27/04; (IPC1-7): H01L21/3205; H01L21/60; H01L21/82; H01L21/822; H01L27/04
Attorney, Agent or Firm:
Masaaki Sakagami
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