SEMICONDUCTOR DEVICE - RENESAS TECH CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2009194369

Kind Code:

A

Abstract:

To provide a technology for improving production yield and product reliability in a semiconductor device having a triple-well structure.

The semiconductor device includes an n-channel type field effect transistor 254n formed in a p-type well 252 in a deep n-type well 200 formed in a p-type substrate 1, and a p-channel type field effect transistor 254p formed in a shallow n-type well 251. An inverter circuit INV1 that does not contribute to circuit operation is formed. A shallow p-type well 252 is connected to the substrate 1 using a first interconnect 253(M1). The gate electrode of a p-channel type field effect transistor 254p and n-channel type field effect transistor 254n are connected to a shallow n-type well 251 using an uppermost interconnect 255(M8).

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Inventors:

FUJII MASAKO
OBAYASHI SHIGEKI
MORINO NAOZUMI
HIRAIWA ATSUSHI
WATARAI SHINICHI
YOSHIDA TAKESHI
KOSHIHISA KAZUTOSHI
SUGIYAMA MASAO
KONDO YOSHINORI
EGAWA YUICHI
KANEKO YOSHIYUKI

Application Number:

JP2008311085A

Publication Date:

August 27, 2009

Filing Date:

December 05, 2008

Export Citation:

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Assignee:

RENESAS TECH CORP

International Classes:

H01L21/8238; H01L21/3205; H01L21/822; H01L21/8234; H01L23/52; H01L27/04; H01L27/06; H01L27/092

Attorney, Agent or Firm:

Yamato Tsutsui

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