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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2010087274
Kind Code:
A
Abstract:

To provide a semiconductor device that reduces backward leakage current while comparatively maintaining forward characteristics in forward behavior.

The semiconductor device 1 (horizontal SBD) includes: a nitride based semiconductor functional layer 2 having a second nitride based semiconductor region 22 functioning as a barrier layer on a first nitride based semiconductor region 21 on which a two-dimensional carrier gas layer 23 is formed; a first main electrode 3 electrically connected to one end of the two-dimensional carrier gas layer 23; a second main electrode 4 electrically connected to the other end of the two-dimensional carrier gas layer 23; and a metal oxide film 6 which is disposed between the first main electrode 3 and second main electrode 4 and electrically connected to the first main electrode 3 so as to reduce the carrier density of the two-dimensional carrier gas layer 23.


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Inventors:
BABA RYOHEI
IWAGAMI SHINICHI
Application Number:
JP2008255232A
Publication Date:
April 15, 2010
Filing Date:
September 30, 2008
Export Citation:
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Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L29/47; H01L29/872
Domestic Patent References:
JP2007048783A2007-02-22
JP2006135241A2006-05-25
JP2008034438A2008-02-14
JP2005317843A2005-11-10
JP2008108870A2008-05-08
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu



 
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