To provide a semiconductor device including a first wiring layer with a wiring pattern, capable of demonstrating original characteristics of a transistor.

The semiconductor device includes source regions 20 and drain regions 30, each extending on the surface of a semiconductor substrate 10 and arranged alternately at a predetermined distance; first wiring layers 70, each connected to a source region 20 via a contact hole 60 and first wiring layers 70a each connected to a drain region 30 via a contact hole 60a, each including a plurality of finger-shaped wirings 75, 75a and 75b; and second wiring layers 90, each being connected to the first wiring layer 70 via a through-hole 80 or the first wiring layer 70a via a through-hole 80a. Each of the first wiring layers 70 and 70a includes the finger-shaped wirings that include regions 74, 74a and 74b without the through-holes 80 and 80a formed therein and regions with through-holes 80 and 80a formed therein, respectively. The wiring widths of the regions 75, 75a and 75b have wiring widths wider than those of the regions 73, 73a and 73b, respectively.