SEMICONDUCTOR DEVICE - RENESAS ELECTRONICS CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2010273541

Kind Code:

A

Abstract:

To provide a DC/DC converter capable of preventing a self-turn-on phenomenon without adding any new component or without changing any driving method.

In the non-insulated type DC/DC converter, a reference potential of a low-side pre-driver 5 for driving a gate of a low-side MOSFET3 is applied from a part other than a main circuit that passes a high-side MOSFET2 and the low-side MOSFET3. Accordingly, parasitic inductance between a source of the low-side MOSFET3 and the reference potential of the pre-driver 5 becomes larger without enlarging a total of the parasitic inductance of the main circuit, the gate of the low-side MOSFET3 can be driven at a negative potential without adding any new component or changing the driving method, and thus the self-turn-on phenomenon can be prevented.

Inventors:

SHIRAISHI MASAKI
HASHIMOTO TAKAYUKI
AKIYAMA NOBORU

Application Number:

JP2010175293A

Publication Date:

December 02, 2010

Filing Date:

August 04, 2010

Export Citation:

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