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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011082967
Kind Code:
A
Abstract:

To provide a semiconductor device including a circuit which is not easily deteriorated.

The semiconductor device has first and second transistors, and first, second and third switches. The first transistor is connected at its first terminal with a first wiring and at its second terminal with a second wiring. The second transistor is connected at its gate and first terminal with the first wiring, and connected at its second terminal with a gate of the first transistor. The first switch is connected between the second and third wirings, the second switch is connected between the second and third wirings, and the third switch is connected between the gate of the first transistor and a third wiring.


Inventors:
KIMURA HAJIME
UMEZAKI ATSUSHI
Application Number:
JP2010201897A
Publication Date:
April 21, 2011
Filing Date:
September 09, 2010
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H03K17/687; G02F1/133; H01L21/822; H01L27/04; H01L29/786; H03K19/0175; G02F1/1368
Domestic Patent References:
JP2008083692A2008-04-10
JP2006024350A2006-01-26
JP2001273785A2001-10-05
JP2009188749A2009-08-20