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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012080557
Kind Code:
A
Abstract:

To provide an MEMS resonator which simplifies the process to reduce the cost, and simplifies the system to enable noise countermeasures, and to provide a manufacturing method of the MEMS resonator.

A manufacturing method of an MEMS resonator is a method for manufacturing MEMS resonators 2, each of which has a semiconductor device and an MEMS structure part 4 which are formed on a substrate 10. The semiconductor device includes an ONO capacitor part 6 having an upper electrode 30 and a lower electrode 26 and a CMOS circuit part 8, and the lower electrode 26 of the ONO capacitor part 6 is formed by a first silicon layer 26. A lower structure 16 of the MEMS structure part 4 and the upper electrode 30 of the ONO capacitor part 6 are formed by a second silicon layer 52. Further, an upper structure 18 of the MEMS structure part 4 and a gate electrode 34 of the CMOS circuit part 8 is formed by a third silicon layer 54.


Inventors:
INABA SHOGO
SATO AKIRA
WATANABE TORU
MORI TAKASHI
Application Number:
JP2011247240A
Publication Date:
April 19, 2012
Filing Date:
November 11, 2011
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H03H9/24; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H03B5/30; H03H3/007; H03H9/02
Domestic Patent References:
JP2002026149A2002-01-25
JP2006263902A2006-10-05
JP2007283480A2007-11-01
JP2001230236A2001-08-24
JP2004025426A2004-01-29
JP2006326806A2006-12-07
JP2005271191A2005-10-06
JP2006042011A2006-02-09
JP2001230236A2001-08-24
JP2004025426A2004-01-29
JP2006326806A2006-12-07
JP2005271191A2005-10-06
JP2006042011A2006-02-09
Foreign References:
WO2006066997A12006-06-29
WO2006066997A12006-06-29
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka



 
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