Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013182992
Kind Code:
A
Abstract:
To provide a high-gain semiconductor device.
A region between a drain and a gate is electrically shielded by arranging a shield plate electrode short-circuited by a source electrode in the vicinity of a drain electrode. Thereby, capacitor Cgd between the gate and the drain is reduced and capacitor Cgs between the gate and the source is increased.
Inventors:
YAMAMURA TAKUJI
Application Number:
JP2012045366A
Publication Date:
September 12, 2013
Filing Date:
March 01, 2012
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/338; H01L21/336; H01L27/095; H01L29/06; H01L29/41; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| JPH11168099A | 1999-06-22 | |||
| JP2007537593A | 2007-12-20 | |||
| JP2006286952A | 2006-10-19 | |||
| JP2010027703A | 2010-02-04 | |||
| JP2012028579A | 2012-02-09 | |||
| JP2012018972A | 2012-01-26 |
Foreign References:
| WO2006132418A1 | 2006-12-14 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
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