Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013187417
Kind Code:
A
Abstract:

To provide a semiconductor device capable of achieving a memristor with a reverse switching polarity in a simple configuration.

A semiconductor device includes a first memristor and a second memristor. The first memristor has a first electrode, a second electrode, and a first resistance change film. The first electrode is composed of a first material. The second electrode is composed of a second material. The first resistance change film is sandwiched between the first electrode and the second electrode, and is connected to the first electrode and the second electrode. The second memristor has a third electrode, a fourth electrode, and a second resistance change film. The third electrode is composed of a third material. The fourth electrode is composed of a fourth material. The second resistance change film is sandwiched between the third electrode and the fourth electrode, and is connected to the third electrode and the fourth electrode. The work function of the first material is smaller than that of the second material, and the work function of the third material is larger than that of the second material.


Inventors:
NISHI YOSHIFUMI
MARUGAME TAKAO
ISHIKAWA TAKAYUKI
KOYAMA MASATO
Application Number:
JP2012052186A
Publication Date:
September 19, 2013
Filing Date:
March 08, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOSHIBA CORP
International Classes:
H01L49/00; H01L27/10; H01L27/105; H01L45/00
Domestic Patent References:
JP2008244090A2008-10-09
JP2010114261A2010-05-20
JP2013084640A2013-05-09
JP2008244090A2008-10-09
JP2011091317A2011-05-06
JP2010114231A2010-05-20
Foreign References:
WO2010147073A12010-12-23
WO2011142386A12011-11-17
WO2009122583A12009-10-08
WO2010147073A12010-12-23
WO2011161936A12011-12-29
Attorney, Agent or Firm:
Hiroaki Sakai
Miyata Hideki