To provide a semiconductor device capable of achieving a memristor with a reverse switching polarity in a simple configuration.
A semiconductor device includes a first memristor and a second memristor. The first memristor has a first electrode, a second electrode, and a first resistance change film. The first electrode is composed of a first material. The second electrode is composed of a second material. The first resistance change film is sandwiched between the first electrode and the second electrode, and is connected to the first electrode and the second electrode. The second memristor has a third electrode, a fourth electrode, and a second resistance change film. The third electrode is composed of a third material. The fourth electrode is composed of a fourth material. The second resistance change film is sandwiched between the third electrode and the fourth electrode, and is connected to the third electrode and the fourth electrode. The work function of the first material is smaller than that of the second material, and the work function of the third material is larger than that of the second material.
MARUGAME TAKAO
ISHIKAWA TAKAYUKI
KOYAMA MASATO
| JP2008244090A | 2008-10-09 | |||
| JP2010114261A | 2010-05-20 | |||
| JP2013084640A | 2013-05-09 | |||
| JP2008244090A | 2008-10-09 | |||
| JP2011091317A | 2011-05-06 | |||
| JP2010114231A | 2010-05-20 |
| WO2010147073A1 | 2010-12-23 | |||
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| WO2009122583A1 | 2009-10-08 | |||
| WO2010147073A1 | 2010-12-23 | |||
| WO2011161936A1 | 2011-12-29 |
Miyata Hideki
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