Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015035515
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows simplifying wiring work.SOLUTION: A semiconductor device PM1 includes: a semiconductor element (insulated-gate bipolar transistor IGBT) 10a including an emitter main electrode N and an emitter sense electrode ES; an integrated circuit IC1 having a terminal CIN for detection; a mold resin body PKG sealing the semiconductor element 10a and the integrated circuit IC1; and a lead RD1. The lead RD1 includes an inner lead portion 31 electrically connected to the emitter sense electrode ES sealed by the mold resin body PKG, an inner lead portion 30 electrically connected to the emitter main electrode N sealed by the mold resin body PKG, and an outer lead portion 40 having one side connected to the inner lead portion 31 and the other side connected to the inner lead portion 30 and exposed outside the mold resin body PKG.
Inventors:
NAKAMURA HIROYUKI
Application Number:
JP2013165997A
Publication Date:
February 19, 2015
Filing Date:
August 09, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/50; H01L25/07; H01L25/18
Domestic Patent References:
| JP2009027883A | 2009-02-05 | |||
| JP2008021796A | 2008-01-31 | |||
| JP2008277433A | 2008-11-13 | |||
| JPH1131777A | 1999-02-02 | |||
| JP2004127983A | 2004-04-22 | |||
| JPH01154546A | 1989-06-16 | |||
| JPH09139461A | 1997-05-27 | |||
| JP2013055739A | 2013-03-21 | |||
| JP2004117111A | 2004-04-15 |
Attorney, Agent or Firm:
Takada 守
Hideki Takahashi
Kuno 淑己
Hideki Takahashi
Kuno 淑己