Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015092577
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor which uses an oxide semiconductor and has excellent electric characteristics.SOLUTION: In a semiconductor device, an In-Sn-O oxide semiconductor layer 403 containing SiOx is used for a channel formation region, and in order to reduce contact resistance with a wiring layer composed of a metal material having a low electric resistance value, a source region or a drain region 404 is provided between the source electrode layer and a drain electrode layer, and the In-Sn-O oxide semiconductor layer containing SiOx. The source region or the drain region, and a pixel region use an In-Sn-O oxide semiconductor layer 408 without containing SiOx in the same layer.
Inventors:
OIKAWA YOSHIAKI
MARUYAMA HODAKA
GOTO HIROMITSU
KAWAE DAISUKE
YAMAZAKI SHUNPEI
MARUYAMA HODAKA
GOTO HIROMITSU
KAWAE DAISUKE
YAMAZAKI SHUNPEI
Application Number:
JP2014238383A
Publication Date:
May 14, 2015
Filing Date:
November 26, 2014
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/336; G02F1/1368; H01L21/363; H01L21/822; H01L27/04; H01L29/786; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
| JP2008243928A | 2008-10-09 | |||
| JP2009031742A | 2009-02-12 | |||
| JP2008277326A | 2008-11-13 |
Foreign References:
| WO2008136505A1 | 2008-11-13 | |||
| WO2008126878A1 | 2008-10-23 | |||
| WO2008133220A1 | 2008-11-06 |