Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015122512
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device that has high electric characteristics or high reliability, or to provide a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device includes: a gate electrode; an oxide semiconductor layer overlapping with the gate electrode; a source electrode and a drain electrode abutting on the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer is film-formed by a sputtering method using a facing target system, and carrier concentration included in the oxide semiconductor layer is less than 1×10/cm.
Inventors:
YAMAZAKI SHUNPEI
Application Number:
JP2015004130A
Publication Date:
July 02, 2015
Filing Date:
January 13, 2015
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/336; C23C14/08; C23C14/34; H01L21/363; H01L21/477; H01L29/786
Domestic Patent References:
| JP2006005115A | 2006-01-05 | |||
| JP2008243929A | 2008-10-09 | |||
| JP2008243582A | 2008-10-09 |
Foreign References:
| WO2008117739A1 | 2008-10-02 | |||
| WO2009034953A1 | 2009-03-19 |