Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015159319
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor achieved in miniaturization while maintaining excellent characteristics.SOLUTION: A semiconductor device includes: an oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layer; a gate electrode overlapping the oxide semiconductor layer; and a gate insulating layer formed between the oxide semiconductor layer and the gate electrode, where the source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extending farther than an end face of the first conductive layer in a channel length direction, and also includes a side wall insulating layer having a bottom face with a length in the channel length direction shorter than that of the extending region in the channel length direction on the extending region of the second conductive layer.
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Inventors:
YAMAZAKI SHUNPEI
GOTO HIROMITSU
SUZAWA HIDEOMI
SASAGAWA SHINYA
KURATA MOTOMU
MIKAMI MAYUMI
GOTO HIROMITSU
SUZAWA HIDEOMI
SASAGAWA SHINYA
KURATA MOTOMU
MIKAMI MAYUMI
Application Number:
JP2015090048A
Publication Date:
September 03, 2015
Filing Date:
April 27, 2015
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/477; H01L21/8242; H01L21/8247; H01L27/108; H01L27/115; H01L29/417; H01L29/788; H01L29/792
Domestic Patent References:
| JPH0786597A | 1995-03-31 | |||
| JP2010021170A | 2010-01-28 | |||
| JP2006319342A | 2006-11-24 | |||
| JP2008535205A | 2008-08-28 | |||
| JP2009528670A | 2009-08-06 | |||
| JP2007220819A | 2007-08-30 | |||
| JP2008135520A | 2008-06-12 | |||
| JP2004055735A | 2004-02-19 |
Foreign References:
| US5567958A | 1996-10-22 |